ELLIPSOMETRIC STUDY OF BORON-NITRIDE THIN-FILM GROWTH ON SI(100)

被引：21

作者：

REN, SL ^{[1
]}

RAO, AM ^{[1
]}

EKLUND, PC ^{[1
]}

DOLL, GL ^{[1
]}

机构：

[1] UNIV KENTUCKY,DEPT PHYS & ASTRON,LEXINGTON,KY 40506

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 15期

关键词：

D O I：

10.1063/1.109599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Variable angle spectroscopic ellipsometry over the photon energy (E) range 1.5 less-than-or-equal-to E less-than-or-equal-to 5.5 eV has been used to study the structure and optical properties of thin (< 400 angstrom) laser-deposited boron nitride films grown on Si(100). The data are interpreted to indicate that initially the film grows next to the substrate in the cubic phase, followed by a reasonably sharp transition after 50-100 angstrom of film growth to an amorphous phase.

引用

页码：1760 / 1762

页数：3

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