IDENTIFICATION OF CR-3+ IMPURITIES IN HEAVILY CR-DOPED BI4GE3O12 SINGLE-CRYSTALS

被引：7

作者：

BRAVO, D

LOPEZ, FJ

机构：

[1] Departamento de Física de Materiales, C-IV Universidad Autónoma de Madrid, Cantoblanco

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 85卷 / 05期

关键词：

D O I：

10.1016/0038-1098(93)90691-F

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Bi4Ge3O12 single crystals heavily doped with Cr ions have been investigated by means of electron paramagnetic resonance (EPR). It has been concluded that the Cr impurities enter the Bi4Ge3O12 lattice predominantly with valence 4+ in the Ge-site. Further, for these strongly doped samples a new spectrum, which does not appear in the weakly doped samples, has been detected. The responsible center has been identified as Cr3+ ions placed at the Bi-site.

引用

页码：415 / 417

页数：3

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