INCORPORATION OF INTERSTITIAL CARBON DURING GROWTH OF HEAVILY CARBON-DOPED GAAS BY MOVCD AND MOMBE

被引：0

作者：

HOFLER, GE ^{[1
]}

BAILLARGEON, JN ^{[1
]}

KLATT, JL ^{[1
]}

HSIEH, KC ^{[1
]}

AVERBACK, RS ^{[1
]}

CHENG, KY ^{[1
]}

机构：

[1] UNIV ILLINOIS, MAT RES LAB, CHAMPAIGN, IL 61820 USA

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 120期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：631 / 634

页数：4

共 10 条

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[8] REDISTRIBUTION OF ZN IN GAAS-ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES [J].

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[9]

HOFLER GE, IN PRESS

[10]

STOCKMAN SA, IN PRESS

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