ELECTRONIC-PROPERTIES OF SI DELTA-DOPED GAAS QUANTUM-WELLS

Magneto-transport and photoluminescence measurements are performed to study the electronic properties of a silicon delta-dope GaAs quantum well. The carrier confinement due to the presence of the GaAlAs barriers is investigated as a function of well width and dopant concentration. The enhancement of the confinement in these structures is clearly observed from the increase of the Fermi energy as indicated in the photoluminescence spectrum. The subband occupations obtained from the oscillations in the magnetoresistance are compared with those extracted from self-consistent calculations. Variations of well width, dopant concentration and diffusion are taken into account so that the theoretical results provide a more realistic and effective description of the system. © 1992.