FIELD-EFFECT TRANSISTOR MICROWAVE CHARACTERIZATION - NOISE-FIGURE, GAIN, POWER MEASUREMENTS ON MICROWAVE BENCH

被引：0

|

作者：

BINET, M

BAUDET, P

机构：

来源：

ACTA ELECTRONICA | 1980年 / 23卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：127 / 136

页数：10

相关论文

共 50 条

[21] SIMPLIFIED EQUIVALENT CIRCUIT FOR NOISE-FIGURE CALCULATION OF MICROWAVE TRANSISTORS
BACHTOLD, W
STRUTT, MJO
ELECTRONICS LETTERS, 1968, 4 (10) : 209 - &
[22] NOVEL METHOD FOR CALCULATING THE NOISE-FIGURE OF MICROWAVE MESFET MIXERS
DREIFUSS, J
MADJAR, A
BARLEV, A
IEE PROCEEDINGS-H MICROWAVES ANTENNAS AND PROPAGATION, 1989, 136 (04) : 289 - 292
[23] SIMULTANEOUS DETERMINATION OF TRANSISTOR NOISE, GAIN, AND SCATTERING PARAMETERS FOR AMPLIFIER DESIGN THROUGH NOISE-FIGURE MEASUREMENTS ONLY - COMMENT
POSPIESZALSKI, MW
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1986, 35 (02) : 228 - 228
[24] HEMT - new generation field-effect microwave transistor
Klamka, J.
Modern Physics Letter B, 1994, 860
[25] A MICROWAVE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR
DRANGEID, KE
MIDDLEHO.S
MOHR, T
WOLF, P
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (02) : 257 - &
[26] DISTRIBUTED MODEL OF MICROWAVE FIELD-EFFECT TRANSISTOR.
Moskalyuk, V.A.
Timofeev, V.I.
Shovkun, I.D.
Radioelectronics and Communications Systems (English translation of Izvestiya Vysshikh Uchebnykh Z, 1986, 29 (06): : 82 - 84
[27] POWER AND IMPEDANCE CHARACTERISTICS OF MICROWAVE FIELD-EFFECT TRANSISTORS UNDER POWER GAIN CONDITIONS
GOLOVENKO, YN
PETROV, BY
TABAGARI, TG
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1988, 43 (11) : 79 - 82
[28] AlGaN/GaN polarization-doped field-effect transistor for microwave power applications
Rajan, S
Xing, HL
DenBaars, S
Mishra, UK
Jena, D
APPLIED PHYSICS LETTERS, 2004, 84 (09) : 1591 - 1593
[29] THE DETERMINATION OF THE NOISE, GAIN AND SCATTERING PARAMETERS OF MICROWAVE TRANSISTORS (HEMTS) USING ONLY AN AUTOMATIC NOISE-FIGURE TEST-SET
MARTINES, G
SANNINO, M
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1994, 42 (07) : 1105 - 1113
[30] MICROWAVE SILICON SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR
DRANGEID, KE
JAGGI, R
MIDDLEHO.S
MOHR, T
MOSER, A
SASSO, G
SOMMERHALDER, R
WOLF, P
ELECTRONICS LETTERS, 1968, 4 (17) : 362 - +

← 1 2 3 4 5 →