MESA SURFACE RECOMBINATION CURRENT IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH AN EMITTER BASE EMITTER STRUCTURE

被引：0
作者：
LIU, W
HARRIS, JS
机构：
[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305
[2] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期
关键词：
D O I：
10.1116/1.585857
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical solution for the minority carrier concentration in the base region of an emitter-base-emitter contact topology heterojunction bipolar transistor has been developed. This solution is used to calculate various base current components, including the mesa surface recombination current which is geometry dependent. This mesa surface recombination current affects the efficiency with which the injected carriers from emitter traverse the base and reach the collector. The significance of this mesa surface recombination current is evaluated and the current gain is calculated as a function of device geometry and base doping level. In particular, the effect of this mesa surface recombination is examined for devices specifically designed for high frequency applications. The emitter crowding is also analyzed quantitatively and its effects on device current gain are discussed.
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页码：1285 / 1296
页数：12
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