CHARGE-DENSITY VARIATION IN A MODEL OF AMORPHOUS-SILICON

被引：49
作者：
GUTTMAN, L [1 ]
CHING, WY [1 ]
RATH, J [1 ]
机构：
[1] UNIV MISSOURI,KANSAS CITY,MO 64110
来源：
PHYSICAL REVIEW LETTERS | 1980年 / 44卷 / 23期
关键词：
D O I：
10.1103/PhysRevLett.44.1513
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1513 / 1516
页数：4
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