NEW 1-6-MU-M WAVELENGTH GAINASP-INP BURIED HETEROSTRUCTURE LASERS

被引：24

作者：

ARAI, S

ASADA, M

SUEMATSU, Y

ITAYA, Y

TANBUNEK, T

KISHINO, K

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 10期

关键词：

D O I：

10.1049/el:19800249

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：349 / 350

页数：2

共 9 条

[1]

ARAI S, 1979, 11TH C SOL STAT DEV

[2]

DOI A, 1979, 37TH DEV RES C DENV

[3] ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GALNASP/INP DIODE-LASERS [J].

HSIEH, JJ ;

SHEN, CC .

APPLIED PHYSICS LETTERS, 1977, 30 (08) :429-431

[4] 1.6 MU-M WAVELENGTH BURIED HETEROSTRUCTURE GAINASP-INP LASERS [J].

ITAYA, Y ;

TANBUNEK, T ;

KISHINO, K ;

ARAI, S ;

SUEMATSU, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :L141-L144

[5] BURIED STRIPE GAINASP-INP DH LASER PREPARED BY USING MELTBACK METHOD [J].

KANO, H ;

OE, K ;

ANDO, S ;

SUGIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) :1887-1888

[6]

KISHINO K, 1979, ELECTRON LETT, V15, P134, DOI 10.1049/el:19790098

[7] ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M [J].

MIYA, T ;

TERUNUMA, Y ;

HOSAKA, T ;

MIYASHITA, T .

ELECTRONICS LETTERS, 1979, 15 (04) :106-108

[8]

NAGAI H, 1979, OPT COMM C AMSTERDAM

[9]

WRIGHT PD, 1980, TOPICAL M INTEGRATED

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