共 50 条
- [1] EXPANSION IN ION-BOMBARDED SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (08): : 835 - &
- [3] Roughening and ripple instabilities on ion-bombarded Si PHYSICAL REVIEW B, 1996, 54 (24): : 17647 - 17653
- [4] SURFACE-TEMPERATURE MEASUREMENTS FOR ION-BOMBARDED SI AND GAAS AT 1.0 TO 2.0 MEV REVIEW OF SCIENTIFIC INSTRUMENTS, 1975, 46 (05): : 633 - 634
- [5] Modelling of long-range damage in ion-bombarded GaAs RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1997, 141 (1-4): : 269 - 280
- [6] INVESTIGATION OF ION-BOMBARDED AND ANNEALED SI BY UPS AND RBS METHODS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 199 (1-2): : 445 - 449
- [9] TEMPERATURE DEPENDENCE OF SURFACE STRUCTURE OF ION-BOMBARDED SI SINGLE CRYSTALS PHYSICA STATUS SOLIDI, 1967, 24 (01): : K1 - &
- [10] CHARACTERISTICS OF ENERGY-BAND STRUCTURE OF ION-BOMBARDED LAYERS OF GAAS AND GAP SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (05): : 570 - 572