LATTICE EXPANSION AND STRAIN IN ION-BOMBARDED GAAS AND SI

被引:65
|
作者
WHAN, RE
ARNOLD, GW
机构
关键词
D O I
10.1063/1.1653443
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:378 / &
相关论文
共 50 条
  • [1] EXPANSION IN ION-BOMBARDED SILICON
    BEEZHOLD, W
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (08): : 835 - &
  • [2] LATTICE STRAIN IN ION-BOMBARDED SI STUDIED BY X-RAY MOIRE TECHNIQUE
    GERWARD, L
    ANDERSEN, AL
    CHRISTIA.G
    PHYSICS LETTERS A, 1972, A 39 (01) : 63 - &
  • [3] Roughening and ripple instabilities on ion-bombarded Si
    Carter, G
    Vishnyakov, V
    PHYSICAL REVIEW B, 1996, 54 (24): : 17647 - 17653
  • [4] SURFACE-TEMPERATURE MEASUREMENTS FOR ION-BOMBARDED SI AND GAAS AT 1.0 TO 2.0 MEV
    LOWE, LF
    KENNEDY, JK
    DAVIES, DE
    DEANE, ML
    EYGES, LJ
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1975, 46 (05): : 633 - 634
  • [5] Modelling of long-range damage in ion-bombarded GaAs
    Stepanova, M
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1997, 141 (1-4): : 269 - 280
  • [6] INVESTIGATION OF ION-BOMBARDED AND ANNEALED SI BY UPS AND RBS METHODS
    PETO, G
    LOHNER, T
    KANSKI, J
    GYULAI, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 199 (1-2): : 445 - 449
  • [7] THE EFFECTS OF ION SPECIES AND TARGET TEMPERATURE ON TOPOGRAPHY DEVELOPMENT ON ION-BOMBARDED SI
    CARTER, G
    VISHNYAKOV, V
    MARTYNENKO, YV
    NOBES, MJ
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) : 3559 - 3565
  • [8] NEXAFS and XPS study of GaN formation on ion-bombarded GaAs surfaces
    Majlinger, Z.
    Bozanic, A.
    Petravic, M.
    Kim, K. -J.
    Kim, B.
    Yang, Y. -W.
    VACUUM, 2009, 84 (01) : 41 - 44
  • [9] TEMPERATURE DEPENDENCE OF SURFACE STRUCTURE OF ION-BOMBARDED SI SINGLE CRYSTALS
    PUNZEL, J
    PHYSICA STATUS SOLIDI, 1967, 24 (01): : K1 - &
  • [10] CHARACTERISTICS OF ENERGY-BAND STRUCTURE OF ION-BOMBARDED LAYERS OF GAAS AND GAP
    GAVRILENKO, VI
    ZUEV, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (05): : 570 - 572