DRIFT VELOCITY SATURATION IN MOS TRANSISTORS

被引：39
作者：
BAUM, G
BENEKING, H
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1970年 / ED17卷 / 06期
关键词：
D O I：
10.1109/T-ED.1970.17014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：481 / +
页数：1
相关论文
共 11 条
[1]   MAXIMUM DRIFT VELOCITY OF MOS-FIELD-EFFECT TRANSISTORS [J].
BAUM, G .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :789-+
[2]  
BAUM G, 1969, THESIS AACHEN
[3]  
BENEKING H, 1969, MAY FACH NTG FACH HA
[4]  
DRANGEID KG, 1969, MAR EUR M SEM RES MU
[5]   CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J].
FROHMANB.D ;
GROVE, AS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) :108-+
[6]   SOURCE TO DRAIN RESISTANCE BEYOND PINCH-OFF IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (MOST) [J].
REDDI, VGK ;
SAH, CT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :139-+
[7]   MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J].
RYDER, EJ .
PHYSICAL REVIEW, 1953, 90 (05) :766-769
[8]   EFFECTS OF FIXED BULK CHARGE ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].
SAH, CT ;
PAO, HC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (04) :393-+
[9]   IGFET ANALYSIS THROUGH NUMERICAL SOLUTION OF POISSONS EQUATION [J].
SCHROEDER, JE ;
MULLER, RS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) :954-+
[10]  
WEDLOCK BD, 1969, MAR EUR M SEM RES MU
12