DRIFT VELOCITY SATURATION IN MOS TRANSISTORS

[1] MAXIMUM DRIFT VELOCITY OF MOS-FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 789 - +

[2] BAUM G, 1969, THESIS AACHEN

[3] BENEKING H, 1969, MAY FACH NTG FACH HA

[4] DRANGEID KG, 1969, MAR EUR M SEM RES MU

[5] CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 108 - +

[6] SOURCE TO DRAIN RESISTANCE BEYOND PINCH-OFF IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (MOST) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 139 - +

[7] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[8] EFFECTS OF FIXED BULK CHARGE ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (04) : 393 - +

[9] IGFET ANALYSIS THROUGH NUMERICAL SOLUTION OF POISSONS EQUATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) : 954 - +

[10] WEDLOCK BD, 1969, MAR EUR M SEM RES MU

[1] MAXIMUM DRIFT VELOCITY OF MOS-FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 789 - +

[2] BAUM G, 1969, THESIS AACHEN

[3] BENEKING H, 1969, MAY FACH NTG FACH HA

[4] DRANGEID KG, 1969, MAR EUR M SEM RES MU

[5] CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 108 - +

[6] SOURCE TO DRAIN RESISTANCE BEYOND PINCH-OFF IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS (MOST) [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 139 - +

[7] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[8] EFFECTS OF FIXED BULK CHARGE ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (04) : 393 - +

[9] IGFET ANALYSIS THROUGH NUMERICAL SOLUTION OF POISSONS EQUATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (12) : 954 - +

[10] WEDLOCK BD, 1969, MAR EUR M SEM RES MU