ANISOTROPIC SURFACE MOBILITY OF ALUMINUM ON SI(111) DURING THE INITIAL-STAGE OF VAPOR-DEPOSITION

被引:9
作者
LEVENSON, LL
USUI, H
YAMADA, I
TAKAGI, T
SWARTZLANDER, AB
机构
[1] KYOTO UNIV,ION BEAM ENGN EXPTL LAB,SAKYO KU,KYOTO 606,JAPAN
[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词
D O I
10.1116/1.576255
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1206 / 1209
页数:4
相关论文
共 12 条
[1]   FIELD ION MICROSCOPE STUDIES OF TRANSITION METAL ADATOM DIFFUSION ON (110), (211) AND (321) TUNGSTEN SURFACES [J].
BASSETT, DW ;
PARSLEY, MJ .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (05) :707-&
[2]   TUNNELING IMAGES OF ATOMIC STEPS ON THE SI(111)7X7 SURFACE [J].
BECKER, RS ;
GOLOVCHENKO, JA ;
MCRAE, EG ;
SWARTZENTRUBER, BS .
PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2028-2031
[3]  
BLAKELY JM, 1973, INTRO PROPERTIES CRY, P212
[4]   SURFACE-DIFFUSION OF PD AND AU ON W SINGLE-CRYSTAL PLANES .2. ANISOTROPY OF PD SURFACE-DIFFUSION DUE TO THE INFLUENCE OF SUBSTRATE STRUCTURE [J].
BUTZ, R ;
WAGNER, H .
SURFACE SCIENCE, 1979, 87 (01) :85-100
[5]  
HANBUCKEN M, 1986, SURF SCI, V16, P133
[6]   THE PROPERTIES OF ALUMINUM THIN-FILMS SPUTTER DEPOSITED AT ELEVATED-TEMPERATURES [J].
INOUE, M ;
HASHIZUME, K ;
TSUCHIKAWA, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1636-1639
[7]   AL SURFACE MOBILITY ON SI(111) DURING INITIAL-STAGES OF IONIZED CLUSTER BEAM DEPOSITION [J].
LEVENSON, LL ;
ASANO, M ;
TANAKA, T ;
USUI, H ;
YAMADA, I ;
TAKAGI, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1552-1556
[8]   SURFACE PHASE-SEPARATION OF VICINAL SI(111) [J].
PHANEUF, RJ ;
WILLIAMS, ED .
PHYSICAL REVIEW LETTERS, 1987, 58 (24) :2563-2566
[9]   SURFACE PHASE-SEPARATION OF VICINAL SI(111) [J].
PHANEUF, RJ ;
WILLIAMS, ED .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :657-657
[10]   EFFECT OF GROWTH TEMPERATURE ON SI MBE FILM [J].
TABE, M ;
ARAI, K ;
NAKAMURA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :703-708