DYNAMICS OF PHOTOEXCITED GAAS BAND-EDGE ABSORPTION WITH SUBPICOSECOND RESOLUTION

被引：278

作者：

SHANK, CV

FORK, RL

LEHENY, RF

SHAH, J

机构：

[1] Bell Telephone Laboratories, Holmdel

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 42卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.42.112

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Time-resolved measurements of optically induced changes in the near-band-gap transmission spectrum of GaAs at 80A°K, following excitation with an ultrashort laser pulse, provide a means of directly monitoring the hot-carrier distribution as it cools to the lattice temperature with a time constant of 4 psec. Exciton screening and band-gap renormalization are observed to occur in less than 0.5 psec. © 1979 The American Physical Society.

引用

页码：112 / 115

页数：4

共 12 条

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SHAH J, 1978, SOLID STATE ELECTRON, V21, P43, DOI 10.1016/0038-1101(78)90113-2

[9] LOW-TEMPERATURE ABSORPTION-SPECTRUM IN GAAS IN PRESENCE OF OPTICAL-PUMPING [J].

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PHYSICAL REVIEW B, 1977, 16 (04) :1577-1580

[10]

SHANK CV, UNPUBLISHED

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