FCAT - LOW-VOLTAGE HIGH-SPEED ALTERABLE N-CHANNEL NON-VOLATILE MEMORY DEVICE

被引：13
|
作者：
HORIUCHI, M [1 ]
KATTO, H [1 ]
机构：
[1] HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO 187,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 06期
关键词：
D O I：
10.1109/T-ED.1979.19518
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：914 / 918
页数：5
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