THE ADVANCED UNIFIED DEFECT MODEL FOR SCHOTTKY-BARRIER FORMATION

被引：411
作者：
SPICER, WE
LILIENTALWEBER, Z
WEBER, E
NEWMAN, N
KENDELEWICZ, T
CAO, R
MCCANTS, C
MAHOWALD, P
MIYANO, K
LINDAU, I
机构：
[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期
关键词：
D O I：
10.1116/1.584244
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1245 / 1251
页数：7
相关论文
共 49 条
[1]   UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES [J].
ALLEN, RE ;
DOW, JD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :383-387
[2]   RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO [J].
BACHRACH, RZ ;
BAUER, RS ;
CHIARADIA, P ;
HANSSON, GV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :335-343
[3]   ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1987, 35 (12) :6154-6164
[4]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[5]   SEGREGATION OF AS ON GAAS(110) SURFACES OBSERVED IMMEDIATELY AFTER CLEAVAGE [J].
BARTELS, F ;
CLEMENS, HJ ;
MONCH, W .
PHYSICA B & C, 1983, 117 (MAR) :801-803
[6]   SURFACE-ANALYSIS OF CONTAMINATED GAAS - COMPARISON OF NEW LASER-BASED TECHNIQUES WITH SIMS [J].
BECKER, CH ;
GILLEN, KT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :1347-1349
[7]   SURFACE-ANALYSIS BY NONRESONANT MULTIPHOTON IONIZATION OF DESORBED OR SPUTTERED SPECIES [J].
BECKER, CH ;
GILLEN, KT .
ANALYTICAL CHEMISTRY, 1984, 56 (09) :1671-1674
[8]   KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES [J].
CAO, R ;
MIYANO, K ;
KENDELEWICZ, T ;
CHIN, KK ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :998-1002
[9]   A CHEMICAL AND STRUCTURAL INVESTIGATION OF SCHOTTKY AND OHMIC AU/GAAS CONTACTS [J].
COULMAN, D ;
NEWMAN, N ;
REID, GA ;
LILIENTALWEBER, Z ;
WEBER, ER ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1521-1525
[10]   ATOMIC GEOMETRY OF GAAS(110)-P(1X1)-AL [J].
DUKE, CB ;
PATON, A ;
MEYER, RJ ;
BRILLSON, LJ ;
KAHN, A ;
KANANI, D ;
CARELLI, J ;
YEH, JL ;
MARGARITONDO, G ;
KATNANI, AD .
PHYSICAL REVIEW LETTERS, 1981, 46 (06) :440-443
12345