CATHODOLUMINESCENCE MEASUREMENTS OF MINORITY-CARRIER LIFETIME IN SEMICONDUCTORS

被引：96

作者：

BOULOU, M ^{[1
]}

BOIS, D ^{[1
]}

机构：

[1] LAB ELECTR & PHYS APPL,3 AVE DESCARTES BP 1,F-94450 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 11期

关键词：

D O I：

10.1063/1.323537

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4713 / 4721

页数：9

共 26 条

[1] ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE [J].

ACKET, GA ;

NIJMAN, W ;

LAM, HT .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3033-3040

[2] MEASUREMENT OF EXTRINSIC ROOM-TEMPERATURE MINORITY CARRIER LIFETIME IN GAP [J].

BACHRACH, RZ ;

LORIMOR, OG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :500-&

[3]

Carslaw HS., 1969, CONDUCTION HEAT SOLI

[4] CATHODOLUMINESCENT MEASUREMENTS IN GAP (ZN, O) [J].

CASEY, HC ;

JAYSON, JS .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2774-&

[5] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J].

CUTHBERT, JD ;

THOMAS, DG .

PHYSICAL REVIEW, 1967, 154 (03) :763-&

[6] KINETICS OF RECOMBINATION IN NITROGEN-DOPED GAP [J].

DAPKUS, PD ;

HACKETT, WH ;

LORIMOR, OG ;

BACHRACH, RZ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4920-4930

[7] GREEN ELECTROLUMINESCENCE FROM GALLIUM PHOSPHIDE DIODES NEAR ROOM TEMPERATURE [J].

DEAN, PJ ;

GERSHENZON, M ;

KAMINSKY, G .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5332-+

[8] RADIATIVE PAIR RECOMBINATION AND SURFACE RECOMBINATION IN GAP PHOTOLUMINESCENCE - (DONOR-ACCEPTOR PAIR BANDS - 20 TO 298 DEGREES K - AR LASER EXCITATION - E/T) [J].

GERSHENZON, M ;

MIKULYAKRM .

APPLIED PHYSICS LETTERS, 1966, 8 (10) :245-+

[9] LIFETIMES OF BOUND EXCITONS IN CDS [J].

HENRY, CH ;

NASSAU, K .

PHYSICAL REVIEW B, 1970, 1 (04) :1628-&

[10] OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3731-&

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