VMOS - NEW MOS INTEGRATED-CIRCUIT TECHNOLOGY

[1] LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 293 - +

[2] PERFORMANCE LIMITATIONS OF IGFET BUCKET-BRIGADE SHIFT REGISTER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (07) : 852 - +

[3] BOLL HJ, 1972, IEEE INT ELECTRON DE

[4] BOONSTRA L, 1972, ELECTRONICS, V45, P64

[5] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[6] CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 108 - +

[7] INCREASING ACCURACY OF MOS CALCULATIONS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09): : 1241 - &

[8] V GROOVE MOS-TRANSISTOR TECHNOLOGY [J]. ELECTRONICS LETTERS, 1973, 9 (19) : 457 - 458

[9] KARP JA, 1972, IEEE SOLID ST CIRC C

[10] ANISOTROPIC ETCHING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4569 - &

[1] LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 293 - +

[2] PERFORMANCE LIMITATIONS OF IGFET BUCKET-BRIGADE SHIFT REGISTER [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (07) : 852 - +

[3] BOLL HJ, 1972, IEEE INT ELECTRON DE

[4] BOONSTRA L, 1972, ELECTRONICS, V45, P64

[5] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[6] CONDUCTANCE OF MOS TRANSISTORS IN SATURATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 108 - +

[7] INCREASING ACCURACY OF MOS CALCULATIONS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09): : 1241 - &

[8] V GROOVE MOS-TRANSISTOR TECHNOLOGY [J]. ELECTRONICS LETTERS, 1973, 9 (19) : 457 - 458

[9] KARP JA, 1972, IEEE SOLID ST CIRC C

[10] ANISOTROPIC ETCHING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4569 - &