SELENIUM-TREATED GAAS(001)-2X3 SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY

被引：16

作者：

SHIGEKAWA, H ^{[1
]}

OIGAWA, H ^{[1
]}

MIYAKE, K ^{[1
]}

AISO, Y ^{[1
]}

NANNICHI, Y ^{[1
]}

HASHIZUME, T ^{[1
]}

SAKURAI, T ^{[1
]}

机构：

[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 05期

关键词：

D O I：

10.1063/1.112246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An Se-passivated GaAs(001) surface was found to be stabilized by 2X3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with approximately 0.6-nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double-layered dimer model. A comprehensive model to explain the 2x3 structure together with the formation of a Ga2Se3-like structure with ordered 1/3 ML Ga vacancies was proposed. 92469459

引用

页码：607 / 609

页数：3

共 18 条

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