Bandgap Tuning in InGaAs/InGaAsP Laser Structure by Quantum Well Intermixing

被引：0
作者：
Nah, Jongbum [1 ]
LiKamWa, Patrick [1 ]
机构：
[1] Univ Cent Florida, Coll Opt & Photon, Orlando, FL 32816 USA
来源：
KOREAN JOURNAL OF OPTICS AND PHOTONICS | 2005年 / 16卷 / 02期
关键词：
D O I：
10.3807/KJOP.2005.16.2.159
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report the selective area bandgap tuning of multiple quantum well structures by an impurity free vacancy induced quantum well intermixing technique. A 3dB waveguide directional coupler was fabricated in the disordered section of an intermixed quantum well sample as a demonstration of photonic device applications.
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页码：159 / 161
页数：3
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