AMBIENT SCANNING TUNNELING SPECTROSCOPY OF N-TYPE AND P-TYPE GALLIUM-ARSENIDE

被引：21
作者：
DAGATA, JA
TSENG, W
机构：
[1] National Institute of Standards and Technology, Gaithersburg
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 06期
关键词：
D O I：
10.1063/1.108865
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ambient scanning tunneling spectroscopy (STS) of n- and p-doped GaAs (I 10) and (100) surfaces, prepared with a stable, electrically transparent surface oxide, reveals that the current-voltage (I-V) characteristics of these surfaces are essentially identical to the I-V properties of the free (110) surface cleaved in ultrahigh vacuum. These results demonstrate for the first time that: (1) meaningful STS spectra of GaAs surfaces can be obtained in air, (2) the passivating layer, consisting of a stable, ultrathin oxide [J. A. Dagata, W. Tseng, J. Bennett, J. Schneir, and H. H. Harary, Appl. Phys. Lett. 59, 3288 (1991)], allows the scanning tunneling microscopy tip to probe the bulk electrical properties of the semiconductor, and (3) quantitative doping information, 10(15) < N(A), N(D) < 10(19) CM-3, can be extracted from the STS data.
引用
收藏
页码：591 / 593
页数：3
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