MAGNETIC-SUSCEPTIBILITY OF ALGAASTE WITH AL CONTENT 04

被引:0
作者
KATSUMOTO, S
机构
[1] Department of Physics, Faculty of Science, University of Tokyo, Bunkyo-ku, Tokyo 113
关键词
DX CENTER; NEGATIVE-U; MAGNETIC SUSCEPTIBILITY;
D O I
10.1143/JPSJ.61.4253
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
[No abstract available]
引用
收藏
页码:4253 / 4254
页数:2
相关论文
共 6 条
[1]  
CHADI DJ, 1989, PHYS REV B, V39, P10366
[2]  
KATSUMOTO S, 1990, JPN J APPL PHYS, V29, pL1512
[3]   MAGNETIC STUDIES OF PERSISTENT PHOTOCONDUCTIVITY IN N-ALXGA1-XAS [J].
KHACHATURYAN, KA ;
AWSCHALOM, DD ;
ROZEN, JR ;
WEBER, ER .
PHYSICAL REVIEW LETTERS, 1989, 63 (12) :1311-1314
[4]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030
[5]   DEEP DONOR LEVELS (DX CENTERS) IN III-V SEMICONDUCTORS [J].
MOONEY, PM .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (03) :R1-R26
[6]   LONG-LIFETIME PHOTOCONDUCTIVITY EFFECT IN N-TYPE GAAIAS [J].
NELSON, RJ .
APPLIED PHYSICS LETTERS, 1977, 31 (05) :351-353