POLYSILICON STRAIN-GAUGE TRANSDUCERS

被引:8
|
作者
GRIDCHIN, VA
LUBIMSKYI, VM
SARINA, MP
机构
[1] Department of Applied Physics, Novosibirsk Institute of Electrical Engineering, Novosibirsk
关键词
D O I
10.1016/0924-4247(92)80124-L
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Strain-gauge transducers with polysilicon resistors can be used successfully in various sensors. They have some advantages in comparison to monocrystalline silicon strain-gauge transducers. However, not enough information is available for the qualitative design of such transducers. The theoretical principles of the temperature dependence of the output signal for a constant supply voltage and constant supply current are described. A polysilicon strain-gauge transducer with a square diaphragm fabricated on the discussed principles is reported. It has an operating temperature range of -190- + 300-degrees-C, and weak temperature dependence of the output signal.
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页码:219 / 223
页数:5
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