LATERAL SPREAD OF BORON IONS IMPLANTED IN SILICON

被引：18

作者：

AKASAKA, Y

KAWAZU, S

HORIE, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 04期

关键词：

D O I：

10.1063/1.1654311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：128 / &

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