LATERAL SPREAD OF BORON IONS IMPLANTED IN SILICON

被引：18
作者：
AKASAKA, Y
KAWAZU, S
HORIE, K
机构：
来源：
APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 04期
关键词：
D O I：
10.1063/1.1654311
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：128 / &
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