SOLUTION GROWTH OF SILVER SULFIDE THIN-FILMS

被引：20

作者：

DHUMURE, SS

LOKHANDE, CD

机构：

[1] Department of Physics, Shivaji University, Kolhapur

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1991年 / 27卷 / 03期

关键词：

D O I：

10.1016/0254-0584(91)90128-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Solution growth of silver sulphide thin films from an alkaline medium (pH 8 to 10) has been carried out using thiourea as a sulphur releasing agent. The temperature of the bath was varied between 8 and 55-degrees-C. Ethylene diamine tetraacetic acid (EDTA) was used as a complexing agent. Improvement in film quality and electrical conductivity was observed for 8-degrees-C bath temperature. The optical bandgap was estimated to be 0.72eV. the Ag2S films are photoactive in nature.

引用

页码：321 / 324

页数：4

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