INTERSUBBAND ABSORPTION AND INFRARED PHOTODETECTION AT 3.5 AND 4.2 MU-M IN GAAS QUANTUM-WELLS

被引：92

作者：

SCHNEIDER, H

FUCHS, F

DISCHLER, B

RALSTON, JD

KOIDL, P

机构：

[1] Fraunhofer-Institut für Angewandte Festkörperphysik, 7800 Freiburg

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 20期

关键词：

D O I：

10.1063/1.104936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose and demonstrate a novel concept for intersubband detectors at operating wavelengths of 3-5-mu-m using GaAs quantum wells. An extremely large intersubband spacing is obtained by using ultrathin AlAs barriers on either side of the GaAs quantum wells followed by a thicker Al0.3Ga0.7As layer. Simultaneously, the confining AlAs layers act as tunnel barriers which allow an electrical detection of the intersubband excitation.

引用

收藏

页码：2234 / 2236

页数：3

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