ANODIC-OXIDATION OF GAP IN N-METHYLACETAMIDE FOR ELECTRICAL PROFILING OF ION-IMPLANTED GAP

被引:6
作者
INADA, T
OHNUKI, Y
机构
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D O I
10.1149/1.2129641
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:68 / 74
页数:7
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共 27 条
[1]  
BOCKRIS JO, 1966, MODERN ASPECTS ELECT, P176
[2]   ZINC ION-IMPLANTATION AS A PREDEPOSITION PROCESS IN GALLIUM-ARSENIDE [J].
BOISSY, MC ;
DIGUET, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) :1505-1509
[3]   VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J].
CASEY, HC ;
ERMANIS, F ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) :2945-+
[4]  
DEARNALEY G., 1973, ION IMPLANTATION
[5]  
DONNELLY JP, 1977, GALLIUM ARSENIDE REL, P166
[6]   ANODIC-OXIDATION OF GALLIUM-PHOSPHIDE IN AQUEOUS HYDROGEN-PEROXIDE [J].
ERMANIS, F ;
SCHWARTZ, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1665-1667
[7]   COMBINED USE OF HE BACKSCATTERING AND HE-INDUCED X-RAYS IN STUDY OF ANODICALLY GROWN OXIDE-FILMS ON GAAS [J].
FELDMAN, LC ;
POATE, JM ;
ERMANIS, F ;
SCHWARTZ, B .
THIN SOLID FILMS, 1973, 19 (01) :81-89
[8]   SELENIUM IMPLANTATION IN GAAS [J].
GAMO, K ;
INADA, T ;
KREKELER, S ;
MAYER, JW ;
EISEN, FH ;
WELCH, BM .
SOLID-STATE ELECTRONICS, 1977, 20 (03) :213-217
[9]   ION-BOMBARDMENT-ENHANCED ETCHING OF SILICON [J].
GIBBONS, JF ;
HECHTL, EO ;
TSURUSHIMA, T .
APPLIED PHYSICS LETTERS, 1969, 15 (04) :117-+
[10]  
GIBBONS JF, 1975, PROJECTED RANGE STAT