PHOTOINDUCED CHANGES IN GLOW-DISCHARGE-DEPOSITED AMORPHOUS SILICON - STAEBLER-WRONSKI EFFECT

被引：38
作者：
ELLIOTT, SR
机构：
[1] Cavendish Laboratory, Cambridge, Madingley Road
来源：
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1979年 / 39卷 / 04期
关键词：
D O I：
10.1080/13642817908246356
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The dramatic photo-induced changes in the electrical properties of glow- discharge-deposited amorphous silicon observed recently by Staebler and Wronski (1977) are discussed in the light of a model recently proposed by the author for defect states in this material. It is assumed that self-trapped excitons in the form of close pairs of oppositely charged defect centres are produced after irradiation with band-gap light. The Fermi level position is then moved nearer the mid-gap, accounting for the metastable decrease in d.c. conductivity, provided the samples are not heavily doped. © 1979 Taylor & Francis Ltd.
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页码：349 / 356
页数：8
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