ATOMIC-STRUCTURE OF DISLOCATIONS IN GAAS

被引：0
|
作者：
GERTHSEN, D [1 ]
PONCE, FA [1 ]
ANDERSON, GB [1 ]
机构：
[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The atomic structure of 30-degrees partial dislocations has been investigated by high resolution electron microscopy. The comparison of the experimental images with image simulations based on a glide set model shows good agreement. The core structures of the 30-degrees partials are not influenced by different electrical properties of the samples.
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页码：23 / 28
页数：6
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