CHARACTERIZATION OF THE TIW-GAAS INTERFACE AFTER RAPID THERMAL ANNEALING

被引：3

作者：

DEPOTTER, M

DERAEDT, W

VANHOVE, M

ZOU, G

BENDER, H

MEURIS, M

VANROSSUM, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.343789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4775 / 4779

页数：5

共 22 条

[1] PHASE-EQUILIBRIA IN METAL-GALLIUM-ARSENIC SYSTEMS - THERMODYNAMIC CONSIDERATIONS FOR METALLIZATION MATERIALS [J].

BEYERS, R ;

KIM, KB ;

SINCLAIR, R .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2195-2202

[2] WSIO.11 SCHOTTKY GATES FOR GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

CALLEGARI, A ;

SPIERS, GD ;

MAGERLEIN, JH ;

GUTHRIE, HC .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :2054-2058

[3] ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS [J].

EGLASH, SJ ;

NEWMAN, N ;

PAN, S ;

MO, D ;

SHENAI, K ;

SPICER, WE ;

PONCE, FA ;

COLLINS, DM .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) :5159-5169

[4] TIW NITRIDE THERMALLY STABLE SCHOTTKY CONTACTS TO GAAS - CHARACTERIZATION AND APPLICATION TO SELF-ALIGNED GATE FIELD-EFFECT TRANSISTOR FABRICATION [J].

GEISSBERGER, AE ;

SADLER, RA ;

BALZAN, ML ;

CRITES, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06) :1701-1706

[5] TIW SILICIDE-GATE TECHNOLOGY FOR SELF-ALIGNED GAAS-FET [J].

GILL, SS ;

PRYCE, GJ ;

WOODWARD, J .

PHYSICA B & C, 1985, 129 (1-3) :430-434

[6]

GOLDBERG YA, 1975, SOV PHYS SEMICOND+, V9, P337

[7] HIGH-TEMPERATURE STABLE W/GAAS INTERFACE AND APPLICATION TO METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AND DIGITAL CIRCUITS [J].

JOSEFOWICZ, JY ;

RENSCH, DB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06) :1707-1715

[8] INTERFACIAL REACTIONS IN THE TI GAAS SYSTEM [J].

KIM, KB ;

KNIFFIN, M ;

SINCLAIR, R ;

HELMS, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1473-1477

[9]

KOHN E, 1979, P INT ELECTRON DEVIC, P469

[10]

KORNILOV BV, 1974, SOV PHYS SEMICOND+, V8, P141

← 1 2 3 →