PLASMA OXIDATION OF GAAS

被引：0
|
作者：
CHANG, RPH [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C132 / C132
页数：1
相关论文
共 50 条
  • [1] PLASMA OXIDATION OF GAAS
    CHANG, RPH
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 186 - 187
  • [2] PLASMA OXIDATION OF GAAS
    CHANG, RPH
    SINHA, AK
    APPLIED PHYSICS LETTERS, 1976, 29 (01) : 56 - 58
  • [3] SELECTIVE PLASMA OXIDATION OF GAAS
    CHANG, RPH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : C227 - C227
  • [4] Plasma anodic oxidation of semiinsulating GaAs
    Pincik, E
    Gmucova, K
    Bartos, J
    Kucera, M
    Jergel, M
    Brunner, R
    APPLIED SURFACE SCIENCE, 1996, 93 (02) : 119 - 130
  • [5] OXIDATION OF GAAS IN AN OXYGEN MULTIPOLE PLASMA
    GOURRIER, S
    MIRCEA, A
    BACAL, M
    THIN SOLID FILMS, 1980, 65 (03) : 315 - 330
  • [6] Magnetically excited plasma oxidation of GaAs
    Nakamura, R
    Ikoma, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (1A): : L8 - L11
  • [7] LOW-TEMPERATURE PLASMA OXIDATION OF GAAS
    YOKOYAMA, N
    MIMURA, T
    ODANI, K
    FUKUTA, M
    APPLIED PHYSICS LETTERS, 1978, 32 (01) : 58 - 60
  • [8] SELECTIVE PLASMA OXIDATION OF GAAS - A STUDY OF THE INTERFACE PROPERTIES
    CHANG, RPH
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 483 - 487
  • [9] ANODIC-OXIDATION OF GAAS USING OXYGEN PLASMA
    YAMASAKI, K
    SUGANO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 321 - 326
  • [10] Low Temperature Oxidation of GaAs by UV Stimulated Plasma Anodizing
    Bibilashvili, Amiran
    Kushitashvili, Zurab
    WORLD MULTIDISCIPLINARY EARTH SCIENCES SYMPOSIUM (WMESS 2016), PTS 1-4, 2016, 44
12345