A LOW-POWER HIGH-SPEED ION-IMPLANTED JFET FOR INP-BASED MONOLITHIC OPTOELECTRONIC ICS

被引：24

作者：

KIM, SJ

WANG, KW

VELLACOLEIRO, GP

LUTZE, JW

OTA, Y

GUTH, G

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 11期

关键词：

D O I：

10.1109/EDL.1987.26714

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：518 / 520

页数：3

共 12 条

[1] NORMALLY-OFF INGAAS JUNCTION FIELD-EFFECT TRANSISTOR WITH INGAAS BUFFER LAYER [J].

ALBRECHT, H ;

LAUTERBACH, C .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :353-354

[2] FULLY ION-IMPLANTED INP JUNCTION FETS [J].

BOOS, JB ;

DIETRICH, HB ;

WENG, TH ;

SLEGER, KJ ;

BINARI, SC ;

HENRY, RL .

ELECTRON DEVICE LETTERS, 1982, 3 (09) :256-258

[3] PLANAR FULLY ION-IMPLANTED INP POWER JUNCTION FETS [J].

BOOS, JB ;

BINARI, SC ;

KELNER, G ;

THOMPSON, PE ;

WENG, TH ;

PAPANICOLAOU, NA ;

HENRY, RL .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) :273-276

[4]

BOOS JB, 1983, DEC IEDM, P625

[5]

CHENG J, 1985, FEB P OPT FIB COMM C

[6] MONOLITHIC OPTOELECTRONIC INTEGRATION - A NEW COMPONENT TECHNOLOGY FOR LIGHTWAVE COMMUNICATIONS [J].

FORREST, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) :2640-2655

[7]

PENGELLY RS, 1982, MICROWAVE FIELD EFFE, P37

[8]

VELLACOLEIRO GP, 1985, UNPUB OPTICAL SENSIT

[9] INGAAS/INP JUNCTION FIELD-EFFECT TRANSISTORS WITH HIGH TRANSCONDUCTANCE MADE USING METAL ORGANIC VAPOR-PHASE EPITAXY [J].

WAKE, D ;

NELSON, AW ;

COLE, S ;

WONG, S ;

HENNING, ID ;

SCOTT, EG .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :626-627

[10]

WANG KW, 1987, UNPUB

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