EPITAXIAL GROWTH OF GE LAYERS ON SI SUBSTRATES BY VACUUM EVAPORATION

被引：11
|
作者：
ITO, K
TAKAHASHI, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 08期
关键词：
D O I：
10.1143/JJAP.7.821
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：821 / +
页数：1
相关论文
共 50 条
  • [41] HETEROEPITAXY OF Ge ON Si(100) BY VACUUM EVAPORATION.
    Ohmachi, Yoshiro
    Nishioka, Takashi
    Shinoda, Yukinobu
    Journal of Applied Physics, 1983, 54 (09): : 5466 - 5469
  • [42] Increase of Si0.5Ge0.5 Bulk Single Crystal Size as Substrates for Strained Ge Epitaxial Layers
    Kinoshita, Kyoichi
    Nakatsuka, Osamu
    Arai, Yasutomo
    Taguchi, Keisuke
    Tomioka, Hiroshi
    Tanaka, Ryota
    Yoda, Shinichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)
  • [43] Increase of Si0.5Ge0.5bulk single crystal size as substrates for strained ge epitaxial layers
    Kinoshita, Kyoichi
    Nakatsuka, Osamu
    Arai, Yasutomo
    Taguchi, Keisuke
    Tomioka, Hiroshi
    Tanaka, Ryota
    Yoda, Shinichi
    Japanese Journal of Applied Physics, 2013, 52 (4 PART 2)
  • [44] GaAs/Ge/Si epitaxial substrates: Development and characteristics
    Buzynin, Yury
    Shengurov, Vladimir
    Zvonkov, Boris
    Buzynin, Alexander
    Denisov, Sergey
    Baidus, Nikolay
    Drozdov, Michail
    Pavlov, Dmitry
    Yunin, Pavel
    AIP ADVANCES, 2017, 7 (01)
  • [45] GROWTH OF EPITAXIAL SILICON LAYERS BY VACUUM EVAPORATION .I. EXPERIMENTAL PROCEDURE + INITIAL ASSESSMENT
    UNVALA, BA
    BOOKER, GR
    PHILOSOPHICAL MAGAZINE, 1964, 9 (100): : 691 - &
  • [46] EPITAXIAL-GROWTH OF GE ON GAAS SUBSTRATES
    KRAUTLE, H
    ROENTGEN, P
    BENEKING, H
    JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) : 439 - 443
  • [47] Microfabricated strained substrates for Ge epitaxial growth
    Evans, PG
    Rugheimer, PP
    Lagally, MG
    Lee, CH
    Lal, A
    Xiao, Y
    Lai, B
    Cai, Z
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
  • [48] An ion beam vapor deposition technique for epitaxial growth of Si-Ge films on Si substrates
    Mohajerzadeh, S
    Selvakumar, CR
    Brodie, DE
    Robertson, MD
    Corbett, JM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (03): : 1963 - 1966
  • [49] Epitaxial Growth of High Quality Ge Films on Si(001) Substrates by Nanocontact Epitaxy
    Nakamura, Yoshiaki
    Murayama, Akiyuki
    Ichikawa, Masakazu
    CRYSTAL GROWTH & DESIGN, 2011, 11 (07) : 3301 - 3305
  • [50] Ge segregation during molecular beam epitaxial growth of Si1-xGex/Si layers
    Gravesteijn, D.J., 1600, (183):
12345