EPITAXIAL GROWTH OF GE LAYERS ON SI SUBSTRATES BY VACUUM EVAPORATION

被引：11
|
作者：
ITO, K
TAKAHASHI, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 08期
关键词：
D O I：
10.1143/JJAP.7.821
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：821 / +
页数：1
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