TEMPERATURE-DEPENDENCE OF THE GUNN THRESHOLD IN GAAS

被引：2

作者：

ADAMS, AR

TATHAM, HL

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 16期

关键词：

D O I：

10.1049/el:19810390

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：557 / 558

页数：2

相关论文

共 50 条

[41] TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS
CHATTERJEE, PK
MCLEVIGE, WV
VAIDYANATHAN, KV
STREETMAN, BG
APPLIED PHYSICS LETTERS, 1976, 28 (09) : 509 - 512
[42] TEMPERATURE-DEPENDENCE OF ION-BEAM MIXING IN GAAS, ALAS, AND GAAS/ALAS/GAAS
KLATT, JL
AVERBACK, RS
FORBES, DV
COLEMAN, JJ
APPLIED PHYSICS LETTERS, 1993, 63 (07) : 976 - 978
[43] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN ELECTRON-BEAM-PUMPED LASERS USING N-TYPE GAAS
PARUI, DP
CHAKRAVARTI, AN
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1973, 11 (08) : 588 - 590
[44] TEMPERATURE-DEPENDENCE OF THRESHOLD OF STRAINED QUANTUM-WELL LASERS
DUTTA, NK
LOPATA, J
SIVCO, DL
CHO, AY
APPLIED PHYSICS LETTERS, 1991, 58 (11) : 1125 - 1128
[45] TEMPERATURE-DEPENDENCE OF THE THRESHOLD ENERGY FOR ATOM DISPLACEMENT IN IRRADIATED MOLYBDENUM
ZAG, W
URBAN, K
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01): : 285 - 295
[46] TEMPERATURE-DEPENDENCE OF THE PHOTOEMISSION THRESHOLD OF THE KCL-AG SYSTEM
SENDECKI, S
SURFACE SCIENCE, 1991, 247 (2-3) : 294 - 298
[47] TEMPERATURE-DEPENDENCE OF THE THRESHOLD VOLTAGE IN A DOUBLE-IMPLANTED MOSFET
DWIVEDI, SK
HALDAR, S
GUPTA, RS
INTERNATIONAL JOURNAL OF ELECTRONICS, 1992, 73 (01) : 65 - 69
[48] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERS
ETTENBERG, M
NUESE, CJ
KRESSEL, H
JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2949 - 2950
[49] TEMPERATURE-DEPENDENCE OF THRESHOLD FOR PION-CONDENSATION IN NEUTRON MATTER
HECKING, P
LETTERE AL NUOVO CIMENTO, 1979, 24 (12): : 420 - 424
[50] TEMPERATURE-DEPENDENCE OF BACKGATING EFFECT IN GAAS INTEGRATED-CIRCUITS
LEE, CP
CHANG, MF
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) : 428 - 430

← 1 2 3 4 5 →