TEMPERATURE-DEPENDENCE OF THE GUNN THRESHOLD IN GAAS

被引：2

作者：

ADAMS, AR

TATHAM, HL

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 16期

关键词：

D O I：

10.1049/el:19810390

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：557 / 558

页数：2

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