CHARACTERIZATION OF SEMICONDUCTOR-MATERIALS BY WTEM AND SIMS

被引：0
|
作者：
GANIERE, JD
BUFFAT, PA
KY, NH
BLANCHARD, B
SPYCHER, R
机构：
[1] ECOLE POLYTECH FED LAUSANNE,I2M,CH-1015 LAUSANNE,SWITZERLAND
[2] LETI,CENG,F-38041 GRENOBLE,FRANCE
来源：
ANALUSIS | 1993年 / 21卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The observation of a wedge-shaped semiconductor specimen by transmission electron microscopy (WTEM) is an interesting alternative to conventional TEM. Information on chemical composition, layer thickness down to atomic resolution, spatial extension of the interfaces can be obtained. Secondary ion mass spectrometry (SIMS) is a complementary technique used to gain information on impurity concentration present in the semiconductor material.
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页码：M12 / M14
页数：3
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