ELECTRON-STIMULATED NITRIDATION OF SI(100) IN PURE AMMONIA

被引：3

作者：

TARASOVA, OL ^{[1
]}

KOTLYAR, VG ^{[1
]}

SARANIN, AA ^{[1
]}

KHRAMTSOVA, EA ^{[1
]}

LIFSHITS, VG ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST AUTOMAT & CONTROL PROC,VLADIVOSTOK 690041,RUSSIA

来源：

SURFACE SCIENCE | 1994年 / 310卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(94)91385-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present the results of an AES study of the Si(100) electron-stimulated nitridation at RT by ammonia gas. The influence of the gas pressure and electron beam density on the nitridation rate have been determined within the ranges 10(-6)-10(-9) Torr and 5 X 10(-3)-5 x 10(-2) A/cm2, respectively. The silicon nitride growth rate has been found to be proportional to the electron flux and is enhanced with increased ammonia pressure in the range 10(-9)-10(-7) Torr. Beyond 10(-7) Torr the Si nitride growth rate is constant and independent of ammonia pressure. A phenomenological model of electron-stimulated nitridation process is suggested, which is in good agreement with the experimental data. The rate of electron-stimulated nitridation has been deduced.

引用

页码：209 / 216

页数：8

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