DEEP LEVELS STUDY IN FLOAT ZONE SI USED FOR FABRICATION OF CCD IMAGERS

被引:10
作者
JASTRZEBSKI, L [1 ]
LAGOWSKI, J [1 ]
机构
[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
关键词
D O I
10.1149/1.2127774
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1957 / 1963
页数:7
相关论文
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