DEEP LEVELS STUDY IN FLOAT ZONE SI USED FOR FABRICATION OF CCD IMAGERS

被引：10

作者：

JASTRZEBSKI, L ^{[1
]}

LAGOWSKI, J ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 09期

关键词：

D O I：

10.1149/1.2127774

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1957 / 1963

页数：7

共 23 条

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[6] COSMETIC DEFECTS IN CCD IMAGERS [J].

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[7] MATERIAL LIMITATIONS WHICH CAUSE STRIATIONS IN CCD IMAGERS [J].

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LEVINE, PA ;

COPE, AD ;

HENRY, WN ;

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[8] DEPTH OF DEFECT ANNIHILATION IN SILICON BY PULSE LASER ANNEALING - EXPERIMENT AND THEORY [J].

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WU, CP .

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[9] FORMATION OF RECOMBINATION CENTERS IN EPITAXIAL GAAS DUE TO RAPID CHANGES OF THE GROWTH VELOCITY [J].

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[10]

JASTRZEBSKI L, 1981, SEMICONDUCTOR SILICO, P138

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