NEW EVIDENCE FOR DEFECT CREATION BY HIGH OPTICAL-EXCITATION IN GLOW-DISCHARGE AMORPHOUS-SILICON

被引：130
作者：
HIRABAYASHI, I [1 ]
MORIGAKI, K [1 ]
NITTA, S [1 ]
机构：
[1] GIFU UNIV,FAC ENGN,KAKAMIGAHARA,GIFU 504,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 07期
关键词：
D O I：
10.1143/JJAP.19.L357
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L357 / L360
页数：4
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