ONE-DIMENSIONAL CONDUCTION ON THE CLEAVED EDGE OF INAS QUANTUM-WELLS

被引：7

作者：

HAUG, RJ ^{[1
]}

MUNEKATA, H ^{[1
]}

CHANG, LL ^{[1
]}

机构：

[1] IBM CORP,DIV RES,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 2A期

关键词：

SEMICONDUCTOR HETEROSTRUCTURES; III-V COMPOUND SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; QUANTUM TRANSPORT; LOW DIMENSIONAL STRUCTURES; ELECTRONIC CONDUCTANCE;

D O I：

10.1143/JJAP.31.L127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The cleaved edge of a GaAlSb/InAs/GaAlSb heterostructure contains a surface channel of accumulated electrons with the channel width given by the thickness of the InAs well. We achieved such structures and studied the temperature and magnetic-field dependence of the resistance along this edge. A strong negative magnetoresistance and well defined conductance fluctuations were observed, which were interpreted consistently by one-dimensional electron conduction.

引用

页码：L127 / L129

页数：3

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