EXPERIMENTAL-EVIDENCE FOR EXCITONIC MECHANISM OF DEFECT GENERATION IN HIGH-PURITY SILICA

被引:157
作者
TSAI, TE [1 ]
GRISCOM, DL [1 ]
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
关键词
D O I
10.1103/PhysRevLett.67.2517
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Direct evidence for the creation of oxygen-vacancy, oxygen-interstitial pairs in SiO2 glasses by an excitonic mechanism is developed from an electron-spin-resonance study of high-purity fused silicas exposed to highly focused 6.4-eV excimer laser light.
引用
收藏
页码:2517 / 2520
页数:4
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共 29 条
[11]  
Hobbs L.W., 1980, J PHYSIQUE C, V41, DOI DOI 10.1051/JPHYSCOL:1980660
[12]   2 TYPES OF OXYGEN-DEFICIENT CENTERS IN SYNTHETIC SILICA GLASS [J].
IMAI, H ;
ARAI, K ;
IMAGAWA, H ;
HOSONO, H ;
ABE, Y .
PHYSICAL REVIEW B, 1988, 38 (17) :12772-12775
[13]   CREATION OF LATTICE-DEFECTS BY ELECTRONIC EXCITATION IN ALKALI-HALIDES [J].
ITOH, N .
ADVANCES IN PHYSICS, 1982, 31 (05) :491-551
[14]   GENERATION MECHANISM OF PHOTOINDUCED PARAMAGNETIC CENTERS FROM PREEXISTING PRECURSORS IN HIGH-PURITY SILICAS [J].
NISHIKAWA, H ;
NAKAMURA, R ;
TOHMON, R ;
OHKI, Y ;
SAKURAI, Y ;
NAGASAWA, K ;
HAMA, Y .
PHYSICAL REVIEW B, 1990, 41 (11) :7828-7834
[15]  
Pfeffer R.L., 1988, PHYSICS TECHNOLOGY A, P181
[16]  
Pfeffer R. L., 1988, PHYSICS CHEM SIO2 SI, P169
[17]   DAMAGE CENTER FORMATION IN SIO2 THIN-FILMS BY FAST ELECTRON-IRRADIATION [J].
PFEFFER, RL .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5176-5180
[18]   FUNDAMENTAL OPTICAL ATTENUATION LIMITS IN LIQUID AND GLASSY STATE WITH APPLICATION TO FIBER OPTICAL WAVEGUIDE MATERIALS [J].
PINNOW, DA ;
RICH, TC ;
OSTERMAYER, FW ;
DIDOMENICO, M .
APPLIED PHYSICS LETTERS, 1973, 22 (10) :527-529
[19]   OXYGEN-ASSOCIATED TRAPPED-HOLE CENTERS IN HIGH-PURITY FUSED SILICAS [J].
STAPELBROEK, M ;
GRISCOM, DL ;
FRIEBELE, EJ ;
SIGEL, GH .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :313-326
[20]   PHOTOINDUCED PARAMAGNETIC DEFECTS IN AMORPHOUS-SILICON DIOXIDE [J].
STATHIS, JH ;
KASTNER, MA .
PHYSICAL REVIEW B, 1984, 29 (12) :7079-7081