EXPERIMENTAL-EVIDENCE FOR EXCITONIC MECHANISM OF DEFECT GENERATION IN HIGH-PURITY SILICA

被引：157

作者：

TSAI, TE ^{[1
]}

GRISCOM, DL ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.67.2517

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Direct evidence for the creation of oxygen-vacancy, oxygen-interstitial pairs in SiO2 glasses by an excitonic mechanism is developed from an electron-spin-resonance study of high-purity fused silicas exposed to highly focused 6.4-eV excimer laser light.

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页码：2517 / 2520

页数：4

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