NEW INFRARED-ABSORPTION BANDS IN HYDROGEN-IMPLANTED SILICON

被引：31
|
作者：
MUKASHEV, BN
NUSSUPOV, KH
TAMENDAROV, MF
机构：
来源：
PHYSICS LETTERS A | 1979年 / 72卷 / 4-5期
关键词：
D O I：
10.1016/0375-9601(79)90503-6
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：381 / 383
页数：3
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