NEW INFRARED-ABSORPTION BANDS IN HYDROGEN-IMPLANTED SILICON

被引：31

作者：

MUKASHEV, BN

NUSSUPOV, KH

TAMENDAROV, MF

机构：

[1] Institute of High Energy Physics, the Academy of Sciences of the Kazakh SSR, Alma-Ata

来源：

PHYSICS LETTERS A | 1979年 / 72卷 / 4-5期

关键词：

D O I：

10.1016/0375-9601(79)90503-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

New vibrational modes of silicon-hydrogen complexes in the stretching (∼2000 cm-1), bending (∼900 cm-1 and wagging (∼600 cm-1 regions are resolved in hydrogen-implanted silicon. Further detailed studies are required to indentity hydrogen-associated bands corresponding to SiH or SiHn groupings. © 1979.

引用

页码：381 / 383

页数：3

共 12 条

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