AMORPHOUS-SIC THIN-FILM P-I-N LIGHT-EMITTING DIODE USING AMORPHOUS-SIN HOT-CARRIER TUNNELING INJECTION LAYERS

被引：39

作者：

PAASCHE, SM

TOYAMA, T

OKAMOTO, H

HAMAKAWA, Y

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

[2] OSAKA UNIV,FAC ENGN SCI,SEMICOND LAB,OSAKA,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期

关键词：

D O I：

10.1109/16.40952

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2895 / 2902

页数：8

共 17 条

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[8] VISIBLE-LIGHT INJECTION-ELECTROLUMINESCENT A-SIC/P-I-N DIODE [J].

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[9] CARRIER INJECTION MECHANISM IN AN A-SIC P-I-N JUNCTION THIN-FILM LED [J].

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