SCHOTTKY-BARRIER FORMATION AND ATOMIC MIXING AT AU/ZNSE(100) AND CO/ZNSE(100) INTERFACES WITH CO AND AU INTERLAYERS

被引：10
作者：
ANDERSON, SG [1 ]
XU, F [1 ]
VOS, M [1 ]
WEAVER, JH [1 ]
CHENG, H [1 ]
机构：
[1] THREE M CO,THREE M CTR,ST PAUL,MN 55144
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.39.5079
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：5079 / 5090
页数：12
相关论文
共 61 条
[1]   INTERFACE GROWTH WITH ATOMS AND PREFORMED CLUSTERS - MORPHOLOGY AND SCHOTTKY-BARRIER VARIATIONS FOR AU/INP(110) [J].
ALDAO, CM ;
VITOMIROV, IM ;
WADDILL, GD ;
WEAVER, JH .
APPLIED PHYSICS LETTERS, 1988, 53 (26) :2647-2649
[2]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[3]   ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES [J].
BRILLSON, LJ ;
MARGARITONDO, G ;
STOFFEL, NG .
PHYSICAL REVIEW LETTERS, 1980, 44 (10) :667-670
[4]   ATOMIC INTER-DIFFUSION AT AU-GAAS INTERFACES STUDIED WITH AL INTERLAYERS [J].
BRILLSON, LJ ;
BAUER, RS ;
BACHRACH, RZ ;
HANSSON, G .
PHYSICAL REVIEW B, 1981, 23 (12) :6204-6215
[5]   NEW METHOD FOR CONTROL OF SCHOTTKY-BARRIER HEIGHT [J].
BRUCKER, CF ;
BRILLSON, LJ .
APPLIED PHYSICS LETTERS, 1981, 39 (01) :67-69
[6]   SCHOTTKY-BARRIER MODULATION AT METAL CONTACTS TO CDS AND CDSE [J].
BRUCKER, CF ;
BRILLSON, LJ ;
KATNANI, AD ;
STOFFEL, NG ;
MARGARITONDO, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :590-593
[7]   ROLE OF CATION DISSOCIATION IN SCHOTTKY-BARRIER FORMATION AT II-VI COMPOUND SEMICONDUCTOR METAL INTERFACES [J].
BRUCKER, CF ;
BRILLSON, LJ .
THIN SOLID FILMS, 1982, 93 (1-2) :67-74
[8]   SIMULTANEOUS EPITAXY AND SUBSTRATE OUT-DIFFUSION AT A METAL-SEMICONDUCTOR INTERFACE - FE/GAAS(001)-C(8X2) [J].
CHAMBERS, SA ;
XU, F ;
CHEN, HW ;
VITOMIROV, IM ;
ANDERSON, SB ;
WEAVER, JH .
PHYSICAL REVIEW B, 1986, 34 (10) :6605-6611
[9]   SILICIDE FORMATION AT THE TI/SI(111) INTERFACE - DIFFUSION PARAMETERS AND BEHAVIOR AT ELEVATED-TEMPERATURES [J].
CHAMBERS, SA ;
HILL, DM ;
XU, F ;
WEAVER, JH .
PHYSICAL REVIEW B, 1987, 35 (02) :634-640
[10]   GROWTH OF UNDOPED ZNSE ON (100) GAAS BY MOLECULAR-BEAM EPITAXY - AN INVESTIGATION OF THE EFFECTS OF GROWTH TEMPERATURE AND BEAM PRESSURE RATIO [J].
DEPUYDT, JM ;
CHENG, H ;
POTTS, JE ;
SMITH, TL ;
MOHAPATRA, SK .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (12) :4756-4762
1234567