ANOMALOUS MUONIUM IN SILICON

被引：103

作者：

PATTERSON, BD ^{[1
]}

HINTERMANN, A ^{[1
]}

KUNDIG, W ^{[1
]}

MEIER, PF ^{[1
]}

WALDNER, F ^{[1
]}

GRAF, H ^{[1
]}

RECKNAGEL, E ^{[1
]}

WEIDINGER, A ^{[1
]}

WICHERT, T ^{[1
]}

机构：

[1] UNIV CONSTANCE,DEPT PHYS,D-7750 CONSTANCE,FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1978年 / 40卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.40.1347

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1347 / 1350

页数：4

共 11 条

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[2]

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[4] MUONIUM FORMATION IN SEMICONDUCTORS [J].

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PREPOST, R ;

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[5]

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[6] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].

HAYNES, JR .

PHYSICAL REVIEW LETTERS, 1960, 4 (07) :361-363

[7]

Johnson R. C., 1994, THESIS

[8]

JOHNSON RF, LBL5526 LAWR BERK LA

[9]

WANG SY, 1973, PHYS REV B, V7, P713

[10] THEORY OF DIFFUSION AND EQUILIBRIUM POSITION OF INTERSTITIAL IMPURITIES IN DIAMOND LATTICE [J].

WEISER, K .

PHYSICAL REVIEW, 1962, 126 (04) :1427-&

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