NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE BASED ON RESONANT INTERBAND TUNNELING

被引：234

作者：

SODERSTROM, JR ^{[1
]}

CHOW, DH ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,TJ WATSON SR LAB APPL PHYS,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 11期

关键词：

D O I：

10.1063/1.101715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1094 / 1096

页数：3

共 18 条

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[10] A PSEUDOMORPHIC IN0.53GA0.47AS ALAS RESONANT TUNNELING BARRIER WITH A PEAK-TO-VALLEY CURRENT RATIO OF 14 AT ROOM-TEMPERATURE [J].

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