THE ROLE OF SURFACE CHARGING AND POTENTIAL REDISTRIBUTION ON THE KINETICS OF HOLE INJECTION REACTIONS AT N-GAAS

被引：25

作者：

NOTTEN, PHL

机构：

来源：

ELECTROCHIMICA ACTA | 1987年 / 32卷 / 04期

关键词：

D O I：

10.1016/0013-4686(87)87044-5

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：575 / 581

页数：7

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