REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS

[1] Carter G., 1971, ION IMPLANTATION, P261

[2] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[3] Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443

[4] CSEPREGI L, COMMUNICATION

[5] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &

[6] HUNSPERGER RG, 1971, RADIATION EFFECTS SE, P393

[7] MAYER JW, 1970, ION IMPLANTATION SEM, P65

[8] Mazey D. J., 1969, Radiation Effects, V1, P229, DOI 10.1080/00337576908235565

[9] PICRAUX ST, 1973, RADIAT EFF, V17, P261

[10] AMORPHOUS GAP PRODUCED BY ION-IMPLANTATION [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (03) : 305 - 313

[1] Carter G., 1971, ION IMPLANTATION, P261

[2] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[3] Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443

[4] CSEPREGI L, COMMUNICATION

[5] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &

[6] HUNSPERGER RG, 1971, RADIATION EFFECTS SE, P393

[7] MAYER JW, 1970, ION IMPLANTATION SEM, P65

[8] Mazey D. J., 1969, Radiation Effects, V1, P229, DOI 10.1080/00337576908235565

[9] PICRAUX ST, 1973, RADIAT EFF, V17, P261

[10] AMORPHOUS GAP PRODUCED BY ION-IMPLANTATION [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (03) : 305 - 313