REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS

被引：53

作者：

GAMO, K

INADA, T

MAYER, JW

EISEN, FH

RHODES, CG

机构：

[1] CALTECH,PASADENA,CA 91125

[2] ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1977年 / 33卷 / 02期

关键词：

D O I：

10.1080/00337577708237472

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：85 / 89

页数：5

共 11 条

[1]

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MAYER, JW ;

SIGMON, TW .

PHYSICS LETTERS A, 1975, 54 (02) :157-158

[3]

Csepregi L., 1976, Radiation Effects, V28, P227, DOI 10.1080/00337577608237443

[4]

CSEPREGI L, COMMUNICATION

[5] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J].

HARRIS, JS ;

MAYER, JW ;

EISEN, FH ;

HASKELL, JD ;

WELCH, B ;

PASHLEY, RD .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

[6]

HUNSPERGER RG, 1971, RADIATION EFFECTS SE, P393

[7]

MAYER JW, 1970, ION IMPLANTATION SEM, P65

[8]

Mazey D. J., 1969, Radiation Effects, V1, P229, DOI 10.1080/00337576908235565

[9]

PICRAUX ST, 1973, RADIAT EFF, V17, P261

[10] AMORPHOUS GAP PRODUCED BY ION-IMPLANTATION [J].

SHIMADA, T ;

KATO, Y ;

SHIRAKI, Y ;

KOMATSUBARA, KF .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (03) :305-313

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