THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON

被引：88

作者：

JONES, DI ^{[1
]}

COMBER, PGL ^{[1
]}

SPEAR, WE ^{[1
]}

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

PHILOSOPHICAL MAGAZINE | 1977年 / 36卷 / 03期

关键词：

D O I：

10.1080/14786437708239738

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：541 / 551

页数：11

共 14 条

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[2]

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[4] GENERAL EXPRESSION FOR THERMOELECTRIC POWER [J].

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[5]

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[6]

JONES DI, 1976, COMMUN PHYS, V1, P39

[7]

Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[8] ELECTRONIC TRANSPORT IN AMORPHOUS SILICON FILMS [J].

LECOMBER, PG ;

SPEAR, WE .

PHYSICAL REVIEW LETTERS, 1970, 25 (08) :509-&

[9] HALL-EFFECT AND IMPURITY CONDUCTION IN SUBSTITUTIONALLY DOPED AMORPHOUS SILICON [J].

LECOMBER, PG ;

JONES, DI ;

SPEAR, WE .

PHILOSOPHICAL MAGAZINE, 1977, 35 (05) :1173-1187

[10] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].

MADAN, A ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257

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